7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout
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7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout The 7Semi UCC21220 Dual-Channel Isolated Gate Driver Breakout is a high-performance isolated gate driver module designed to provide safe and efficient driving of power MOSFETs and GaN FETs in modern power electronics systems. Many microcontrollers and control boards cannot directly drive high-voltage gates or handle fast switching signals without isolation; this board solves that by offering galvanic isolation between the control logic and the power stage. This ensures reliable operation, protects sensitive components, and reduces noise interference in demanding applications. Featuring dual channels with robust isolation and wide input ranges, this breakout simplifies the implementation of isolated MOSFET gate driving in converters, inverters, motor drives, and power supplies. Its compact design and ease of integration make it suitable for students learning power electronics, hobbyists building advanced projects, and professionals developing prototypes or industrial systems. With strong performance and reliable protection, it helps improve overall system efficiency and safety wherever isolated high-speed switching is needed. Features: Advanced basic and functional isolation for safe and efficient power transfer Fast and precise switching with 40 ns max propagation delay, 5 ns delay matching, and low pulse-width distortion High output drive strength with 4 A peak source and 6 A peak sink capability Built-in protection features including UVLO, active pulldown, and input transient rejection Supports high-side, low-side, and half-bridge configurations Ideal for driving MOSFETs and GaN FETs in demanding power applications
- Dual-channel isolated gate driver with 4A source / 6A sink drive
- Ultra-low 40 ns max propagation delay for high-speed switching
- Galvanic isolation between logic and power stages
- Compatible with 3.3V and 5V microcontrollers (Arduino, Raspberry Pi)
- Supports MOSFETs and GaN FETs in half-bridge, high-side, and low-side configurations
- Built-in UVLO, active pulldown, and transient noise protection
- High-speed isolated gate driving for power electronics
- Robust noise immunity and signal integrity
- Compact breakout design for easy prototyping
- Suitable for industrial, automotive, and renewable energy systems
- Ideal for students, hobbyists, and professional engineers
| Parameter | Specification |
|---|---|
| Product Type | Isolated Gate Driver Breakout |
| Driver IC | UCC21220 |
| Channels | Dual (2) |
| Isolation | Basic and Functional Galvanic Isolation |
| Propagation Delay | Max 40 ns |
| Delay Matching | 5 ns |
| Pulse-Width Distortion | 5.5 ns |
| Output Drive Capacity | 4 A Peak Source / 6 A Peak Sink |
| Protection Features | UVLO, Active Pulldown, Input Transient Rejection |
| Configurations Supported | High-Side, Low-Side, Half-Bridge |
| Board Type | Compact Breakout Module |
What is the maximum propagation delay of the UCC21220 gate driver?
The UCC21220 has a maximum propagation delay of 40 ns, ensuring fast and precise switching for high-frequency power applications.
Can this gate driver be used with GaN FETs?
Yes, the UCC21220 is optimized for both MOSFETs and GaN FETs, offering 4 A peak source and 6 A peak sink drive strength.
Is the UCC21220 compatible with 3.3V and 5V logic levels?
Yes, it supports wide input voltage ranges and is compatible with 3.3V and 5V microcontroller logic levels.
What protection features are included on this breakout board?
It includes UVLO, active pulldown, and input transient rejection to safeguard against voltage anomalies and noise.
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About 7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout by 7Semi
Shop 7Semi UCC21220 Dual-Channel Isolated Gate Driver. Compatible with Arduino, Raspberry Pi, MOSFETs & GaN FETs. Low 40ns delay.
Categorised under: Industrial› Breakout Boards› Electronic Modules