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7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board

7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board

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7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board The 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout Board is designed to efficiently drive power transistors like MOSFETs, IGBTs, and SiC devices with a peak source current of 4A and a peak sink current of 6A. Its 3kVRMS isolation barrier ensures safe and reliable operation in high-voltage environments, while programmable dead-time control allows precise timing adjustments to minimize switching losses and prevent shoot-through. Integrated protection features, including undervoltage lockout (UVLO) and a disable function, safeguard your system and enable immediate shutdown when needed. This compact breakout board is perfect for applications such …
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7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board The 7Semi UCC21330 Dual-Channel Isolated Gate Driver Breakout Board is designed to efficiently drive power transistors like MOSFETs, IGBTs, and SiC devices with a peak source current of 4A and a peak sink current of 6A. Its 3kVRMS isolation barrier ensures safe and reliable operation in high-voltage environments, while programmable dead-time control allows precise timing adjustments to minimize switching losses and prevent shoot-through. Integrated protection features, including undervoltage lockout (UVLO) and a disable function, safeguard your system and enable immediate shutdown when needed. This compact breakout board is perfect for applications such as motor drives, power converters, and industrial automation systems requiring precise and reliable gate driving. Features: Supports dual low-side, dual high-side, and half-bridge configurations for a wide range of power applications. High Current Capacity: 4A peak source and 6A peak sink output provide robust transistor control. Enhanced Protection: All power supplies include UVLO protection and a configurable dead time for safe operation. Precision timing is achieved with a 33ns mean propagation latency and a maximum pulse-width distortion of 5ns. Robust CMTI operation: Common-mode transient immunity of more than 125V/ns enables dependable operation in high-noise settings. Fast Disable Logic: The built-in disable feature allows you to shut down both outputs at the same time.

  • 4A peak source / 6A peak sink output current
  • 3kVRMS reinforced isolation for high-voltage safety
  • Supports MOSFETs, IGBTs, and SiC devices
  • Programmable dead-time control to prevent shoot-through
  • High CMTI >125V/ns for noise immunity
  • 33ns propagation delay with 5ns max distortion
  • High-current dual-channel gate driving
  • Reinforced isolation for safety-critical applications
  • Fast switching with low propagation delay
  • Flexible configuration support
  • Integrated protection and control features
Compatible Devices MOSFETs, IGBTs, SiC devices
Peak Source Current 4A
Peak Sink Current 6A
Isolation Voltage 3kVRMS
Dead-Time Control Programmable
What is the maximum output current of the UCC21330 gate driver?

The UCC21330 delivers 4A peak source and 6A peak sink current for strong transistor switching.

Can this gate driver be used with SiC MOSFETs?

Yes, it is compatible with MOSFETs, IGBTs, and SiC devices due to high CMTI and fast switching performance.

Does it support half-bridge configurations?

Yes, it supports dual low-side, dual high-side, and half-bridge configurations with programmable dead time.

Is the board safe for high-voltage applications?

Yes, it features 3kVRMS isolation and UVLO protection for safe operation in high-voltage systems.

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About 7Semi UCC21330 Dual-channel Isolated Gate Driver Breakout Board by 7Semi

Shop 7Semi UCC21330 gate driver board with 3kVRMS isolation, 4A/6A output. Compatible with MOSFETs, IGBTs & SiC. Buy online in India.

Categorised under: Industrial

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